Solution‐Based Processing of Optoelectronically Active Indium Selenide-Reference-Cited by-同舟云学术

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Solution‐Based Processing of Optoelectronically Active Indium Selenide

Published:2018-08-10 Issue:38 Volume:30 Page:1802990
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Kang Joohoon¹,Wells Spencer A.¹,Sangwan Vinod K.¹,Lam David¹,Liu Xiaolong²,Luxa Jan³,Sofer Zdeněk³,Hersam Mark C.¹²⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA

2. Applied Physics Graduate Program Northwestern University Evanston IL 60208 USA

3. Department of Inorganic Chemistry University of Chemistry and Technology Prague Technicka 5, 166 28 Prague 6 Czech Republic

4. Department of Chemistry Electrical Engineering and Computer Science Northwestern University Evanston IL 60208 USA

Funder

National Science Foundation

U.S. Department of Energy

Office of Naval Research

Grantová Agentura České Republiky

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201802990

Reference45 articles.

1. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

2. Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

3. Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface

4. Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement

5. Ultraefficient Ultraviolet and Visible Light Sensing and Ohmic Contacts in High-Mobility InSe Nanoflake Photodetectors Fabricated by the Focused Ion Beam Technique

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