Influence of Antimony doping on electrical and photoelectrical response in Indium Selenide crystals-Reference-Cited by-同舟云学术

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Influence of Antimony doping on electrical and photoelectrical response in Indium Selenide crystals

Published:2024-01 Issue: Volume:626 Page:127457
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sikligar S.P.,Prajapati N.N.^ORCID,Patel H.M.^ORCID,Patel P.D.^ORCID,Patel P.B.^ORCID,Desai H.N.,Dhimmar J.M.,Modi B.P.^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference43 articles.

1. Crystal structure and Raman spectra of InSe;Shigetomi;Phys. Status Solidi (b),1998

2. Structural, Electrical and Optical Characterization of N- and Si-Implanted GaSe Single Crystal Grown by Bridgman Method;Karabulut,2004

3. X-ray and electron diffraction analysis of GaSe crystals

4. High quality single crystal growth of layered InSe Semiconductor by Bridgman Technique

5. Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures

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