High quality single crystal growth of layered InSe Semiconductor by Bridgman Technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Phase diagram of In-Se system and crystal growth of indium monoselenide
2. Time-resolved photoluminescence study of InSe
3. Electron-hole liquid in layered InSe: Comparison of two- and three-dimensional excitonic states
4. Photoluminescence studies on the layer semiconductor InSe
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1. Growth and Characterization of Large-size InSe Crystal from Non-stoichiometric Solution via a Zone Melting Method;Journal of Inorganic Materials;2024
2. Influence of Antimony doping on electrical and photoelectrical response in Indium Selenide crystals;Journal of Crystal Growth;2024-01
3. Multifunctional indium selenide devices based on van der Waals contacts: High-quality Schottky diodes and optoelectronic memories;Nano Energy;2023-04
4. Synthesis and characterization of (Sb0.05In0.95)Se crystals;Materials Today: Proceedings;2023-02
5. Controlled Growth of Indium Selenides by High-Pressure and High-Temperature Method;Frontiers in Materials;2022-01-11
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