Electrolyte-Gated Organic Field-Effect Transistor Based on a Solution Sheared Organic Semiconductor Blend-Reference-Cited by-同舟云学术

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Electrolyte-Gated Organic Field-Effect Transistor Based on a Solution Sheared Organic Semiconductor Blend

Published:2016-10-10 Issue:46 Volume:28 Page:10311-10316
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Leonardi Francesca¹,Casalini Stefano¹,Zhang Qiaoming¹,Galindo Sergi¹,Gutiérrez Diego¹,Mas-Torrent Marta¹

Affiliation:

1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) and CIBER-BBN; Campus de la UAB; 08193 Bellaterra Spain

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201602479/fullpdf

Reference33 articles.

1. Tuning charge transport in solution-sheared organic semiconductors using lattice strain

2. Development of high-performance printed organic field-effect transistors and integrated circuits

3. Solution-printed organic semiconductor blends exhibiting transport properties on par with single crystals

4. Single Crystal-Like Performance in Solution-Coated Thin-Film Organic Field-Effect Transistors

5. A Rapid, Low‐Cost, and Scalable Technique for Printing State‐of‐the‐Art Organic Field‐Effect Transistors

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