Schottky Contact in Monolayer WS 2 Field‐Effect Transistors-Reference-Cited by-同舟云学术

Schottky Contact in Monolayer WS 2 Field‐Effect Transistors

Published:2019-02-20 Issue:5 Volume:2 Page:1900001
ISSN:2513-0390
Container-title:Advanced Theory and Simulations
language:en
Short-container-title:Adv. Theory Simul.

Author:

Tang Hao¹^ORCID,Shi Bowen¹,Pan Yuanyuan²,Li Jingzhen¹,Zhang Xiuying¹,Yan Jiahuan¹,Liu Shiqi¹,Yang Jie¹,Xu Lianqiang³,Yang Jinbo¹⁴,Wu Mingbo²,Lu Jing¹⁴

Affiliation:

1. State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking University Beijing 100871 P. R. China

2. State Key Laboratory of Heavy Oil ProcessingInstitute of New EnergyCollege of Chemical EngineeringChina University of Petroleum (East China) Qingdao 266580 P.R. China

3. School of Physics and Electronic Information EngineeringEngineering Research Center of Nanostructure and Functional MaterialsNingxia Normal University Guyuan Ningxia 756000 P. R. China

4. Collaborative Innovation Center of Quantum Matter, Beijing 100871 P. R. China

Funder

National Natural Science Foundation of China

Ministry of Science and Technology

Peking University

Natural Science Foundation of Ningxia Province

Publisher

Wiley

Subject

Multidisciplinary,Modeling and Simulation,Numerical Analysis,Statistics and Probability

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adts.201900001