Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors-Reference-Cited by-同舟云学术

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Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

Published:2018-08-16 Issue:2 Volume:10 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Quhe Ruge,Li Qiuhui,Zhang Qiaoxuan,Wang Yangyang,Zhang Han,Li Jingzhen,Zhang Xiuying,Chen Dongxue,Liu Kaihui,Ye Yu,Dai Lun,Pan Feng,Lei Ming,Lu Jing

Funder

National Natural Science Foundation of China

Ministry of Science and Technology of China

Beijing University of Posts and Telecommunications

China Postdoctoral Science Foundation

National Materials Genome Project

Central Universities

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.10.024022/fulltext

Reference51 articles.

1. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

2. Tunable Transport Gap in Phosphorene

3. Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

4. Renormalization of the quasiparticle band gap in doped two-dimensional materials from many-body calculations

5. Carrier Plasmon Induced Nonlinear Band Gap Renormalization in Two-Dimensional Semiconductors

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