Simulation of silicon semiconductor processing

Author:

Pichler Peter,Ryssel Heiner

Publisher

Wiley

Subject

Electrical and Electronic Engineering

Reference49 articles.

1. Boron in near-intrinsic < 100> and < 111 > silicon under inert and oxidizing ambients -diffusion and segregation;Anroniadis;J. Electrochem. Sot.,1978

2. A Monte Carlo computer program for the transport of energetic ions in amorphous targets;Biersack;Nuclear Instruments and Merhods,1980

3. A revised model for the oxidation of Si by oxygen;Blanc;Appl. Phys Lett.,1978

4. A diffusion model for arsenic in silicon;Chiu;IBM J. Res. Develop,1971

5. An application of the boltzmann transport equation to ion range and damage distribution in multileveled targets;Christel;J. Awl. Phys.,1980

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