1. On concentration dependence of arsenic diffusivity in silicon;International Journal of Computational Materials Science and Engineering;2016-03
2. Dopants;Computational Microelectronics;2004
3. Atomic Configurations and Energetics of Arsenic Impurities in a Silicon Grain Boundary;Physical Review Letters;1998-07-06
4. Diffusion;Fundamentals of Semiconductor Processing Technology;1995
5. Nonequilibrium point defects and diffusion in silicon;Materials Science and Engineering: R: Reports;1994-10-15