High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique-Reference-Cited by-同舟云学术

High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

Published:2016-05-18 Issue:7 Volume:24 Page:914-919
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Tukiainen Antti¹,Aho Arto¹,Gori Gabriele²,Polojärvi Ville¹,Casale Mariacristina²,Greco Erminio²,Isoaho Riku¹,Aho Timo¹,Raappana Marianna¹,Campesato Roberta²,Guina Mircea¹

Affiliation:

1. Tampere University of Technology; Optoelectronics Research Centre; PO Box 692 FI-33101 Tampere Finland

2. CESI S.p.A.; Via Rubattino 54 20134 Milan Italy

Funder

European Space Agency

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference48 articles.

1. Efficiency of hot-carrier solar energy converters;Ross;Journal of Applied Physics,1982

2. Efficient optical extraction of hot-carrier energy;Saeed;Nature Communications,2014

3. Island size effects in nanoparticle-enhanced photodetectors;Stuart;Applied Physics Letters,1998

4. Enhanced semiconductor optical absorption via surface plasmon excitation in metal nanoparticles;Schaad;Applied Physics Letters,2005

5. Plasmonic solar cells;Catchpole;Optics Express,2008

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