67-3: Invited Paper: Flexible Substrate Engineering to Enhance Bending Stability
Author:
Affiliation:
1. Electrical Engineering, POSTECH; Korea
Funder
Samsung
Publisher
Wiley
Reference6 articles.
1. Flexible organic transistors and circuits with extreme bending stability;Sekitani;Nature Materials,2010
2. Highly robust neutral plane oxide TFTs withstanding 0.25 mm bending radius for stretchable electronics;Kim;Scientific Reports,2016
3. Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly(ethylene naphthalate) substrates;Park;Journal of Materials Chemistry C,2015
4. Circular structure for high mechanical bending stability of a-IGZO TFTs;Mativenga;IEEE Journal of Electron Devices Society,2017
5. Excellent mechanical bending stability of flexible a-IGZO TFT by dual gate dual sweep using TCAD simulation;Billah;SID Symposium Digest of Technical Papers,2016
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Stress‐Free Detachment of Flexible Substrate from Glass Carrier Using CO2 Point Laser for Large‐Area Applications;Advanced Materials Interfaces;2023-03-21
2. Organic/Inorganic Hybrid Buffer in InGaZnO Transistors under Repetitive Bending Stress for High Electrical and Mechanical Stability;ACS Applied Materials & Interfaces;2019-12-27
3. Recent review on improving mechanical durability for flexible oxide thin film transistors;Journal of Physics D: Applied Physics;2019-09-10
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