Organic/Inorganic Hybrid Buffer in InGaZnO Transistors under Repetitive Bending Stress for High Electrical and Mechanical Stability
Author:
Affiliation:
1. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
2. Division of Electrical Engineering, Hanyang University, Ansan, Gyeonggi-do 15588, Republic of Korea
Funder
Korea Display Research Corporation
Ministry of Trade, Industry and Energy
Korea Semiconductor Research Consortium
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.9b21531
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