Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly(ethylene naphthalate) substrates
Author:
Affiliation:
1. Department of Advanced Materials Engineering for Information & Electronics
2. Kyung Hee University
3. Yongin
4. Republic of Korea
5. Electronics & Telecommunication Research Institute
6. Daejeon
Abstract
Bending characteristics of flexible oxide thin-film transistors could be enhanced by optimizing the barrier layers on the polyethylene naphthalate substrate.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC00048C
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