Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Characterization of differently grown GaN epilayers by time-resolved four-wave mixing technique
2. Application of picosecond four‐wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN
3. Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures
4. Transients of Carrier Recombination and Diffusion in Highly Excited GaN Studied by Photoluminescence and Four-Wave Mixing Techniques
5. Migration enhanced MOCVD (MEMOCVD TM ) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate
Cited by 43 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The transport mechanism and barrier height inhomogeneity in Ag-ZnSnN2 Schottky barrier solar cells;Journal of Alloys and Compounds;2024-09
2. Growth of β-Ga2O3 nanostructures by thermal oxidation of GaN-on-sapphire for optoelectronic devices applications;Journal of Alloys and Compounds;2024-08
3. A Review of Light-Emitting Diodes and Ultraviolet Light-Emitting Diodes and Their Applications;Photonics;2024-05-22
4. Chemical trend of radiative recombination in III-nitrides;Physical Review Materials;2024-04-10
5. Effect of proton irradiation on the cathodoluminescence of gallium nitride films;Radiation Physics and Chemistry;2024-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3