Transients of Carrier Recombination and Diffusion in Highly Excited GaN Studied by Photoluminescence and Four-Wave Mixing Techniques
Author:
Affiliation:
1. Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania
Publisher
Institute of Physics, Polish Academy of Sciences
Subject
General Physics and Astronomy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Layer thickness dependent carrier recombination rate in HVPE GaN;physica status solidi (b);2010-06-23
2. Electron dynamics in GaN wafers with an inhomogeneous distribution of defects in the depth direction;Journal of Applied Physics;2009-09-15
3. Carrier dynamics in Fe-doped GaN epilayers;physica status solidi (c);2009-04-08
4. All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN;Journal of Crystal Growth;2007-03
5. Time-Resolved Transient Grating Spectroscopy for Studies of Nonequilibrium Carrier Dynamics in Wide Band-Gap Semiconductors;Acta Physica Polonica A;2006-08
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