Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns-Reference-Cited by-同舟云学术

Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns

Published:2007-08 Issue:8 Volume:244 Page:2838-2846
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Calleja J. M.,Lazić S.,Sanchez-Páramo J.,Agulló-Rueda F.,Cerutti L.,Ristić J.,Fernández-Garrido S.,Sánchez-Garcia M. A.,Grandal J.,Calleja E.,Trampert A.,Jahn U.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

3. Photon correlation studies of single GaN quantum dots

4. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

5. Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping efficiency

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5. Lattice parameters, deviations from Vegard’s rule, and E2 phonons in InAlN;Applied Physics Letters;2008-12-29