Lattice parameters, deviations from Vegard’s rule, and E2 phonons in InAlN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3056656
Reference17 articles.
1. Current status of AlInN layers lattice-matched to GaN for photonics and electronics
2. High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)
3. Vegard’s law deviation in band gap and bowing parameter of AlxIn1-xN
4. Anomalous Ion Channeling inAlInN/GaNBilayers: Determination of the Strain State
5. Deviations from Vegard’s rule in Al1−xInxN (0001) alloy thin films grown by magnetron sputter epitaxy
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