Selective growth of GaN nanocolumns by Al thin layer on substrate
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy
2. Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy
3. Faceted and Vertically Aligned GaN Nanorod Arrays Fabricated without Catalysts or Lithography
4. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
5. Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy
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1. Selective-area growth of GaN and AlGaN nanowires on N-polar GaN templates with 4° miscut by plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2023-06
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3. Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on AlxOy Nucleation Stripes;Crystal Growth & Design;2020-06-04
4. Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al x O y nucleation layer;Nanotechnology;2020-02-13
5. Mechanism of Selective Area Growth by MBE;Molecular Beam Epitaxy;2019-02-08
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