Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on AlxOy Nucleation Stripes-Reference-Cited by-同舟云学术

Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on AlxOy Nucleation Stripes

Author:

Sobanska M.¹,Zytkiewicz Z. R.¹^ORCID,Ekielski M.²,Klosek K.¹,Sokolovskii A. S.³,Dubrovskii V. G.⁴^ORCID

Affiliation:

1. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02 668 Warszawa, Poland

2. Łukasiewicz Research Network - Institute of Electron Technology, Al. Lotnikow 32/46, 02 668 Warszawa, Poland

3. ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia

4. St. Petersburg State University, Universitetskaya Emb. 13B, 199034, St. Petersburg, Russia

Funder

Russian Science Foundation

Narodowe Centrum Nauki

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

Reference79 articles.

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