Electroluminescence in quantum well heterostructures p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs under uniaxial stress-Reference-Cited by-同舟云学术

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Electroluminescence in quantum well heterostructures p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs under uniaxial stress

Published:2009-03 Issue:3 Volume:246 Page:522-526
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Berman Irina V.,Bogdanov Evgeniy V.,Kissel Heiko,Minina Natalia Ya.,Shirokov Stanislav S.,Yunovich Alexander E.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Uniaxial stress dependence of spatially confined excitons

2. Reflectance spectroscopy on GaAs-Ga0.5Al0.5As single quantum wells under in-plane uniaxial stress at liquid-helium temperature

3. T. Suski and W. Paul(eds.), High Pressure in Semiconductor Physics I, Semiconductors and Semimetals, Vol. 54 (Academic Press, San Diego, 1998).

4. Nonlinear dynamics of semiconductor laser emission under variable feedback conditions

5. Wavelength tuning of laser diodes using hydrostatic pressure

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1. Bandgap tailoring and optical response of InAlAs/InGaAs/GaAsSb double quantum well heterostructures: the impact of uniaxial strain and well width variations;Journal of Modern Optics;2022-12-15

2. Band dispersion and optical gain calculations of staggered type GaAs0.4Sb0·6/In0.7Ga0.3As/GaAs0.4Sb0.6 nano-heterostructure under electric field and [100] strain;Superlattices and Microstructures;2021-02

3. Structural and Optical Characteristics of Nanoscale Semiconductor Lasers for Telecommunication and Biomedical Applications: A Review;IOP Conference Series: Materials Science and Engineering;2019-08-01

4. High pressure affects on optical characteristics of AlGaAs/GaAsP/AlGaAs nano-heterostructure;Optik;2019-03

5. Polarization mode switching in p-AlGaAs/GaAsP/n-AlGaAs diodes in presence of compressive stress;Journal of Physics: Conference Series;2017-10

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