Polarization mode switching in p-AlGaAs/GaAsP/n-AlGaAs diodes in presence of compressive stress
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/950/i=4/a=042047/pdf
Reference14 articles.
1. Semiconductors under Uniaxial Strain
2. Energy spectrum and topology evolution of the Fermi surface of two-dimensional holes inGaAs/Al0.5Ga0.5Asheterostructures under uniaxial compression: Theory and experiment
3. Far-infrared intersubband absorption inp-typeGaAs/AlxGa1−xAssingle heterojunctions under uniaxial compression
4. Effect of uniaxial stress on electroluminescence, valence band modification, optical gain, and polarization modes in tensile strainedp-AlGaAs/GaAsP/n-AlGaAs laser diode structures: Numerical calculations and experimental results
5. Electroluminescence in quantum well heterostructures p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs under uniaxial stress
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