Band dispersion and optical gain calculations of staggered type GaAs0.4Sb0·6/In0.7Ga0.3As/GaAs0.4Sb0.6 nano-heterostructure under electric field and [100] strain-Reference-Cited by-同舟云学术

Band dispersion and optical gain calculations of staggered type GaAs0.4Sb0·6/In0.7Ga0.3As/GaAs0.4Sb0.6 nano-heterostructure under electric field and [100] strain

Published:2021-02 Issue: Volume:150 Page:106694
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Riyaj Md,Vijay J.P.,Khan A.M.,Kattayat Sandhya,Kaya Savaş,Ahmad M. Ayaz,Kumar Shalendra,Alvi P.A.,Rathi Amit

Funder

Manipal University

Department of Science and Technology, Government of West Bengal

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference35 articles.

1. Tunability of optical gain (SWIR region) in type-II In0.70Ga0.30As/GaAs0.40Sb0.60 nano-heterostructure under high pressure;Nirmal;Phys. E Low-dimens. Syst. Nanostruct.,2016

2. Field effective band alignment and optical gain in type-I Al0.45Ga0.55As/GaAs0.84P0.16 nano-heterostructures;Nirmal;International Journal of light & electron optics: Optik,2016

3. Anisotropy and optical gain improvement in type-II In0.3Ga0.7As/GaAs0.4Sb0.6 nano-scale heterostructure under external uniaxial strain;Singh;Superlattice. Microst.,2016

4. Uniaxial strain induced optical properties of complex type-II InGaAs/InAs/GaAsSb nano-scale heterostructure;Bhardwaj;International Journal of light & electron optics: Optik,2017

5. “Optimization of Type-II ‘W’ shaped InGaAsP/GaAsSb nanoscale-heterostructure under electric field and temperature”;Dolia;Superlattice. Microst.,2017

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