Anisotropy and optical gain improvement in type-II In0.3Ga0.7As/GaAs0.4Sb0.6 nano-scale heterostructure under external uniaxial strain-Reference-Cited by-同舟云学术

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Anisotropy and optical gain improvement in type-II In0.3Ga0.7As/GaAs0.4Sb0.6 nano-scale heterostructure under external uniaxial strain

Published:2016-10 Issue: Volume:98 Page:406-415
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Singh A.K.,Riyaj Md.,Anjum S.G.,Yadav Nisha,Rathi Amit,Siddiqui M.J.,Alvi P.A.

Funder

Moscow State University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference39 articles.

1. Optimization of high optical gain in Type-II In0.70Ga0.30As/GaAs0.40Sb0.60 lasing nano-heterostructure for SWIR applications;Nirmal;Superlattices Microstruct.,2015

2. Tunability of optical gain (SWIR region) in Type-II In0.70Ga0.30As/GaAs0.40Sb0.60 nano-heterostructure under high pressure;Nirmal;Phys. E Low Dimens. Syst. Nanostruct.,2016

3. Low-threshold short-wavelength infrared InGaAs/GaAsSb ‘W’-Type QW laser on InP substrate;Chang;IEEE Photonics Technol. Lett.,2015

4. Room-temperature mid-infrared “M”-type GaAsSb/InGaAs quantum well lasers on InP substrate;Chang;J. Appl. Phys.,2014

5. Design and modeling of InP-based InGaAs/GaAsSb type-II “W” type quantum wells for mid-Infrared laser applications;Pan;J. Appl. Phys.,2013

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