Surface electronic properties of n- and p-type InGaN alloys-Reference-Cited by-同舟云学术

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Surface electronic properties of n- and p-type InGaN alloys

Published:2008-05 Issue:5 Volume:245 Page:881-883
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

King P. D. C.,Veal T. D.,Lu Hai,Jefferson P. H.,Hatfield S. A.,Schaff W. J.,McConville C. F.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Surface charge accumulation of InN films grown by molecular-beam epitaxy

2. Intrinsic Electron Accumulation at Clean InN Surfaces

3. Evidence forp-Type Doping of InN

4. Preparation and characterization of atomically clean, stoichiometric surfaces ofn- andp-type GaN(0001)

5. Transition from electron accumulation to depletion at InGaN surfaces

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1. Multi-junction solar cells paving the way for super high-efficiency;Journal of Applied Physics;2021-06-28

2. UV-light enhanced CO gas sensors based on InGaN nanorods decorated with p-Phenylenediamine-graphene oxide composite;Sensors and Actuators B: Chemical;2020-03

3. Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect;Applied Physics Letters;2018-02-19

4. Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon;ACS Applied Materials & Interfaces;2016-08-15

5. Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting;Semiconductor Science and Technology;2016-06-06

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