Electric fields in AlGaN/GaN quantum well structures-Reference-Cited by-同舟云学术

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Electric fields in AlGaN/GaN quantum well structures

Published:2006-06 Issue:7 Volume:243 Page:1551-1559
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

McAleese C.,Costa P. M. F. J.,Graham D. M.,Xiu H.,Barnard J. S.,Kappers M. J.,Dawson P.,Godfrey M. J.,Humphreys C. J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

2. Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering

3. TEM characterisation of defects, strains and local electric fields in AlGaN/InGaN/GaN structures

4. Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences

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1. Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves).;Micron;2024-04

2. Accuracy of polarization field measurements by electron holography in InGaN quantum wells;Physical Review B;2021-02-18

3. Highly spatially resolved mapping of the piezoelectric potentials in InGaN quantum well structures by off-axis electron holography;Journal of Applied Physics;2020-10-21

4. Quantitative measurement of nanoscale electrostatic potentials and charges using off-axis electron holography: Developments and opportunities;Ultramicroscopy;2019-08

5. Precise determination of polarization fields in c-plane GaN/Al x Ga1-x N/GaN heterostructures with capacitance–voltage-measurements;Japanese Journal of Applied Physics;2019-04-23

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