THz lasing of SiGe/Si quantum-well structures due to shallow acceptors-Reference-Cited by-同舟云学术

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THz lasing of SiGe/Si quantum-well structures due to shallow acceptors

Published:2003-01 Issue:1 Volume:235 Page:135-138
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Kagan M. S.,Altukhov I. V.,Chirkova E. G.,Sinis V. P.,Troeger R. T.,Ray S. K.,Kolodzey J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures

2. Far-Infrared Stimulated Emission in p-Ge under High Uniaxial Pressure

3. Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium

4. Resonant States in Strained Semiconductors

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1. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures;Semiconductors;2015-01

2. Role of Mechanical Stresses at Ion Implantation of CdHgTe Solid Solutions;Ukrainian Journal of Physics;2013-09

3. Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells;Semiconductor Physics Quantum Electronics and Optoelectronics;2011-09-25

4. Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates;Nanoscale Research Letters;2010-11-16

5. Terahertz electroluminescence from Be δ-doped GaAs/AlAs quantum well;Applied Physics Letters;2010-07-12

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