Far-Infrared Stimulated Emission in p-Ge under High Uniaxial Pressure-Reference-Cited by-同舟云学术

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Far-Infrared Stimulated Emission in p-Ge under High Uniaxial Pressure

Published:1996-11-01 Issue:1 Volume:198 Page:35-40
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Altukhov I. V.,Chirkova E. G.,Kagan M. S.,Korolev K. A.,Sinis V. P.,Yassievich I. N.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. The Highly Nonequilibrium Hot-Hole Distributions in Germanium, in: Spectroscopy of Nonequilibrium Electrons and Phonons, Ed. and , Elsevier Publ. Co., Amsterdam/New York 1992.

2. and , Symmetry and Strain-Induced Effects in Semiconductors, Wiley, New York 1974.

3. Bulk Current Instabilities in Uniaxially Strained Germanium

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1. Terahertz Device Technology;Technology of Quantum Devices;2009-11-15

2. Theory of a strainedp−Geresonant-state terahertz laser;Physical Review B;2004-09-21

3. THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structures;physica status solidi (b);2003-02

4. THz lasing of SiGe/Si quantum-well structures due to shallow acceptors;physica status solidi (b);2003-01

5. Stimulated THz emission of acceptor-doped SiGe/Si;SPIE Proceedings;2002-06-05

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