Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium-Reference-Cited by-同舟云学术

Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium

Published:1999-01 Issue:1 Volume:88 Page:51-57
ISSN:1063-7761
Container-title:Journal of Experimental and Theoretical Physics
language:en
Short-container-title:J. Exp. Theor. Phys.

Author:

Altukhov I. V.,Kagan M. S.,Korolev K. A.,Sinis V. P.,Chirkova E. G.,Odnoblyudov M. A.,Yassievich I. N.

Publisher

Pleiades Publishing Ltd

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1134/1.558763.pdf

Reference15 articles.

1. A. A. Andronov, in Spectroscopy of Nonequilibrium Electrons and Phonons, C. V. Shank and B. P. Zakharchenya (eds.), Elsevier, Amsterdam-New York (1992), p. 1.

2. J. Faist, F. Capasso, D. L. Sivco et al., Science 264, 553 (1994).

3. O. Gauthier-Lafaye, S. Sauvage, P. Boucaud et al., Appl. Phys. Lett. 70, 3197 (1997).

4. I. V. Altukhov, M. S. Kagan, K. A. Korolev, V. P. Sinis, and F. A. Smirnov, Zh. Éksp. Teor. Fiz. 101, 756 (1992) [Sov. Phys. JETP 74, 404 (1992)].

5. I. V. Altukhov, M. S. Kagan, K. A. Korolev, and V. P. Sinis, JETP Lett. 59, 476 (1994).

Cited by 50 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Far-infrared Gallium Nitride-based Quantum Cascade Laser;Nanoelectronics Devices: Design, Materials, and Applications Part II;2023-11-26

2. Resonant boron acceptor states in semiconducting diamond;Physical Review B;2021-10-08

3. Terahertz emission upon the band-to-band excitation of Group-IV semiconductors at room temperature;Semiconductors;2015-03

4. Effect of the direct capture of holes with the emission of optical phonons on impurity-photoconductivity relaxation in p-Si:B;Semiconductors;2015-02

5. Relaxation kinetics of impurity photoconductivity in p-Si:B with various levels of doping and degrees of compensation in high electric fields;Semiconductors;2013-11