Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation-Reference-Cited by-同舟云学术

Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation

Published:2020-02-06 Issue:4 Volume:22 Page:1901173
ISSN:1438-1656
Container-title:Advanced Engineering Materials
language:en
Short-container-title:Adv. Eng. Mater.

Author:

Nguyen Tuan‐Khoa¹^ORCID,Phan Hoang-Phuong¹,Dowling Karen M.²,Yalamarthy Ananth Saran²,Dinh Toan¹³,Balakrishnan Vivekananthan¹,Liu Tanya⁴,Chapin Caitlin A.⁵,Truong Quoc-Dung⁶,Dau Van Thanh⁷,Goodson Kenneth E.⁴,Senesky Debbie G.²⁵,Dao Dzung Viet⁷,Nguyen Nam-Trung¹

Affiliation:

1. Queensland Micro and Nanotechnology Centre Griffith University 170 Kessels Road, Brisbane Queensland 4111 Australia

2. Department of Electrical Engineering Stanford University 350 Jane Stanford Way Stanford CA 94305 USA

3. School of Mechanical and Electrical Engineering University of Southern Queensland West St, Darling Heights Queensland 4350 Australia

4. Department of Mechanical Engineering Stanford University Building 530, 440 Escondido Mall Stanford CA 94305 USA

5. Department of Aeronautics & Astronautics Stanford University 496 Lomita Mall Durand Building Stanford CA 94305 USA

6. R&D Center BOSCH Automotive Deutsches Haus, 33 Le Duan, Ben Nghe Ho Chi Minh Vietnam

7. School of Engineering and Built Environment Griffith University Parklands Drive, Gold Coast Queensland 4215 Australia

Funder

Australian Research Council

Australian National Fabrication Facility

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adem.201901173

Reference23 articles.

1. Integrated circuits in silicon carbide for high-temperature applications

2. High-frequency and high-quality silicon carbide optomechanical microresonators

3. Robust Free‐Standing Nano‐Thin SiC Membranes Enable Direct Photolithography for MEMS Sensing Applications

4. Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires

5. Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure

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