A fully integrated low voltage (0.5 V) X-band CMOS low noise amplifier

Author:

Liu Baohong,Zhou Jianjun,Mao Junfa

Funder

National Science Fund for Creative Research Groups of China

National Basic Research Program of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. B. Afshar A. Niknejad X/Ku band CMOS LNA design techniques 2006 389 392

2. Analysis, design, and X-band implementation of a self-biased active feedback Gm-boosted common-gate CMOS LNA;Chamas;IEEE Trans Microwave Theory Tech,2009

3. A noise optimization formulation for CMOS low-noise amplifiers with on-chip low-Q inductors;Sun;IEEE Trans Microwave Theory Tech,2006

4. T.K.K. Tang M.N. El-Gamal Gain controllable very low voltage (<1V) 8-9 GHz integrated CMOS LNAs 2002 205 208

5. 13 GHz 4.67 dB NF CMOS low-noise amplifier;Gil;Electron Lett,2003

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1. Highly robust X‐band quasi circulator‐integrated low‐noise amplifier for high survivability of radio frequency front‐end systems;International Journal of Circuit Theory and Applications;2021-03-17

2. A 0.6-V sub-mW X-band RFSOI CMOS LNA with novel complementary current-reused technique;International Journal of Circuit Theory and Applications;2017-03-07

3. A Solar-Powered 2.4-GHz LNA RFIC;Microwave and Optical Technology Letters;2013-07-26

4. Design of a 0.5 V CMOS cascode low noise amplifier for multi-gigahertz applications;Journal of Semiconductors;2012-01

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