A 0.6-V sub-mW X-band RFSOI CMOS LNA with novel complementary current-reused technique-Reference-Cited by-同舟云学术

A 0.6-V sub-mW X-band RFSOI CMOS LNA with novel complementary current-reused technique

Published:2017-03-07 Issue:12 Volume:45 Page:2046-2056
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int. J. Circ. Theor. Appl.

Author:

Dai Ruofan¹²

Affiliation:

1. Shanghai Huahong Grace Semiconductor Manufacturing Corporation; TD/Design Engineering; Build EF, 288# Halei Road Shanghai China

2. Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences; State Key Laboratory of Functional Materials for Informatics; Build 8, 865# Changning Road Shanghai China

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cta.2336/fullpdf

Reference17 articles.

1. A 0.6-V zero-IF/low-IF receiver with integrated fractional-N synthesizer for 2.4-GHz ISM-band applications;Balankutty;IEEE Journal of Solid-State Circuits,2010

2. Design of ultra-low-voltage RF frontends with complementary current-reused architectures;Hsieh;IEEE Transactions on Microwave Theory and Techniques,2007

3. Minimized device junction leakage current at forward-bias body and applications for low-voltage quadruple-stacked common-gate amplifier;Wang;IEEE Transactions on Electron Devices,2014

4. A fully integrated 5 GHz low-voltage LNA using forward body bias technology;Chang;IEEE Microwave and Wireless Components Letters,2009

5. A high gain and high linearity current-reused CMOS LNA employing modified derivative superposition technique with bulk-bias control;Dai;Microwave and Optical Technology Letter,2014

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