An improved model for boron diffusion and activation in silicon
Author:
Publisher
Wiley
Subject
General Chemical Engineering,Environmental Engineering,Biotechnology
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/aic.11984/fullpdf
Reference44 articles.
1. The International Technology Roadmap for Semiconductors, 2006. Available at: http://www.itrs.net/Links/2006update/2006UpdateFinal.htm
2. Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth;Aboy;Appl Phys Lett.,2006
3. Effect of ramp rates during rapid thermal annealing of ion implanted boron for formation of ultra-shallow junctions;Agarwal;J Electron Mater.,1999
4. Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon;Gebel;Nucl Instrum Methods Phys Res B.,2002
5. Application of excimer laser annealing in the formation of ultrashallow p+/n junctions;Chong;Adv Microelectronic Process Tech.,2000
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1. SIMULATION OF BORON DIFFUSION IN THE NEAR-SURFACE REGION OF SILICON SUBSTRATE;Surface Review and Letters;2020-08-18
2. Surface-Based Control of Oxygen Interstitial Injection into ZnO via Submonolayer Sulfur Adsorption;The Journal of Physical Chemistry C;2016-10-07
3. Interface-Mediated Photostimulation Effects on Diffusion and Activation of Boron Implanted into Silicon;ECS Journal of Solid State Science and Technology;2013
4. Mechanism and kinetics of near-surface dopant pile-up during post-implant annealing;Journal of Applied Physics;2012-05
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