Effect of ramp rates during rapid thermal annealing of ion implanted boron for formation of ultra-shallow junctions-Reference-Cited by-同舟云学术

Effect of ramp rates during rapid thermal annealing of ion implanted boron for formation of ultra-shallow junctions

Published:1999-12 Issue:12 Volume:28 Page:1333-1339
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Agarwal Aditya,Gossmann Hans-J.,Fiory Anthony T.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-999-0118-7.pdf

Reference17 articles.

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2. A.T. Fiory, K.K. Bourdelle, A. Agarwal, H.-J. Gossmann, and C.S. Rafferty, Mater. Res. Soc. Symp. Proc. 568 (Warrendale, PA: MRS, 1999).

3. S. Shishiguchi, A. Mineji, T. Hayashi, and S. Saito, VLSI Tech. Symp. (Piscataway, NJ: IEEE, 1997), p. 1059.

4. C.S. Rafferty, G.H. Gilmer, M. Jaraiz, D.J. Eaglesham, and H.-J. Gossmann, Appl. Phys. Lett. 68, 2395 (1996).

5. H.-J. Gossmann, Semiconductor Silicon, ed., H.R. Huff, U. Goselle, and H. Tsuya (Pennington, NJ: Electrochem. Soc., 1998), p. 884.

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