69‐1: Etch Properties of Silicon Nitride Films Using a New In‐Line Equipment with Atmospheric Glow Plasma for the OLED Flexible Display
Author:
Affiliation:
1. APP Co., Ltd Gyeonggi-do Korea
2. Electronics and Telecommunications Research Institute Daejeon Korea
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13088
Reference8 articles.
1. Atmospheric pressure plasma for surface modification of flexible and printed electronic devices: A review;Kin K. N.;Thin Solid Films,2016
2. Study of selective amorphous silicon etching to silicon nitride using a pin-to-plate dielectric barrier discharge in atmospheric pressure
3. Studies on non-thermal atmospheric pressure plasma process conditions for groove formation on silicon nitride for silicon solar cells
4. Silicon nitride etching in high- and low-density plasmas using SF6/O2/N2 mixtures
5. Silicon nitride etch characteristics in SF6/O2 and C3F6O/O2 plasmas and evaluation of their global warming effects
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