Silicon nitride etching in high- and low-density plasmas using SF6/O2/N2 mixtures
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.1547703
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1. Vertical sidewall of silicon nitride mask and smooth surface of etched-silicon simultaneously obtained using CHF3/O2 inductively coupled plasma;Vacuum;2023-01
2. Spectroscopic Analysis of CF4/O2 Plasma Mixed with N2 for Si3N4 Dry Etching;Coatings;2022-07-27
3. Si nanocone structure fabricated by a relatively high-pressure hydrogen plasma in the range of 3.3–27 kPa;Journal of Vacuum Science & Technology B;2022-05
4. Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films;Journal of Vacuum Science & Technology A;2021-05
5. Etch selectivity during plasma-assisted etching of SiO2 and SiNx: Transitioning from reactive ion etching to atomic layer etching;Journal of Vacuum Science & Technology A;2020-09
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