P‐1.2: Realization of Visible Detection of InGaZnO Thin‐Film Transistors by Coating (PEA)2PbI4 Light Absorbing Layer

Abstract

In this work, the visible detection of RF‐sputtered InGaZnO (IGZO) thin‐film transistor (TFT) is realized by spin‐coating a light absorption layer of (PEA) 2 PbI 4 on the top of IGZO TFTs. A large number of carriers flow into the IGZO channel after visible light illuminations, resulting in the negative shift of the transfer curves and thus realizing the visible detection. The IGZO/(PEA)2PbI4 bilayer‐based phototransistors exhibit a photoresponsibility of 63.2 A/W and detectivity of 1.13 × 1014 Jones under the illumination of green light (550 nm).