20.1: Invited Paper: Research on Oxide Thin Film Transistors for Wearable Sensors

Abstract

With the rapid development of the Internet of Things, sensors as an important foundation in the era of smart interconnection, have a significant potential in the emerging fields of smart home, wearable devices, and smart mobile terminals. Flexible sensor has been attracting a great attention due to its portability, miniaturization and long endurance. The high consumption and signal crosstalk are urgent issues for the high‐integration sensing array. These issues could be effectively addressed by active‐matrix thin film transistors (TFT) backplane. In this work, the feasibility of oxide TFT for flexible sensor was discussed, in which high‐quality oxi de semiconductor films, oxide dielectric films, and printing Ag electrodes and wires were investigated, respectively. The device performance of flexible Si‐doped SnO2 TFT was optimized by modulating oxygen partial pressure, which could achieve a relative good electrical properties at room temperature. To implement low‐consumption application, high quality of high‐k ZrO2 dielectric film was investigated by solution‐processed method. The dielectric properties of ZrO2 film with the mircowave‐as sisted or deep ultraviolet irradiation‐assisted annealing process was similar to that of the thermal ann ealing process. The morphology and conductivity of Ag electrodes and wires printed by electrohydrodynamic (EHD) inkjet printing technology were studied. High conductivity of Ag electrodes and wires was achieved at a low curing temperature. These results imply that oxide TFT has a significant potential in the application of flexible sensor array.