Stretchable Polymer Gate Dielectric by Ultraviolet-Assisted Hafnium Oxide Doping at Low Temperature for High-Performance Indium Gallium Tin Oxide Transistors-Reference-Cited by-同舟云学术

Stretchable Polymer Gate Dielectric by Ultraviolet-Assisted Hafnium Oxide Doping at Low Temperature for High-Performance Indium Gallium Tin Oxide Transistors

Published:2019-05-24 Issue:24 Volume:11 Page:21675-21685
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hur Jae Seok^ORCID,Kim Jeong Oh,Kim Hyeon A,Jeong Jae Kyeong^ORCID

Funder

Samsung

Korea Evaluation Institute of Industrial Technology

MKE

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b02935

Reference54 articles.

1. Performance Improvement of p-Channel Tin Monoxide Transistors With a Solution-Processed Zirconium Oxide Gate Dielectric

2. High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

3. High performance thin film transistors using low-temperature solution-processed Li-incorporated In2O3/ZrO2 stacks

4. Improved Electrical Properties of Solution-Processed ZrO2Gate Dielectric for Large-Area Flexible Electronics

5. High-performance In-Zn-O thin-film transistors with a soluble processed ZrO2 gate insulator

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