Stretchable Polymer Gate Dielectric by Ultraviolet-Assisted Hafnium Oxide Doping at Low Temperature for High-Performance Indium Gallium Tin Oxide Transistors
Author:
Funder
Samsung
Korea Evaluation Institute of Industrial Technology
MKE
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.9b02935
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1. Performance Improvement of p-Channel Tin Monoxide Transistors With a Solution-Processed Zirconium Oxide Gate Dielectric
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5. High-performance In-Zn-O thin-film transistors with a soluble processed ZrO2 gate insulator
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