Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy
Author:
Affiliation:
1. EPSRC National Epitaxy Facility The University of Sheffield North Campus Broad Lane Sheffield S3 7HQ UK
2. Department of Electronic and Electrical Engineering The University of Sheffield North Campus Broad Lane Sheffield S3 7HQ UK
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100283
Reference39 articles.
1. InGaAs-GaAs quantum-dot lasers
2. Quantum-Dot Semiconductor Optical Amplifiers for Energy-Efficient Optical Communication
3. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
4. The QD-Flash: a quantum dot-based memory device
5. Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP
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