Correlative Atomic Coordination and Interfacial Charge Polarity in Al 2 O 3 /GaN and Al 2 O 3 /Si Heterostructures
Author:
Affiliation:
1. Advanced Semiconductor Laboratory, Electrical and Computer Engineering Programs CEMSE Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955 Saudi Arabia
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202200413
Reference37 articles.
1. Origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures
2. F.Werner B.Veith D.Zielke L.Kühnemund C.Tegenkamp M.Seibt R.Brendel A. P.Schmidt 2011 109 113701.
3. Chemical and structural study of electrically passivating Al2O3/Si interfaces prepared by atomic layer deposition
4. Interface and Material Characterization of Thin ALD-Al2O3 Layers on Crystalline Silicon
5. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
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