Origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures-Reference-Cited by-同舟云学术

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Origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures

Published:2023-01 Issue: Volume:608 Page:155099
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Wang Chuanju,AlQatari Feras,Khandelwal Vishal,Lin Rongyu,Li Xiaohang

Funder

King Abdullah University of Science and Technology

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference37 articles.

1. Structural Properties of Al–O Monolayers in SiO2 on Silicon and the Maximization of Their Negative Fixed Charge Density;Hiller;ACS Appl. Mater. Interfaces,2018

2. Interface and material characterization of thin ALD-Al2O3 layers on crystalline silicon;Naumann;Energy Procedia,2012

3. Chemical and structural study of electrically passivating Al2O3/Si interfaces prepared by atomic layer deposition;Naumann;J. Vac. Sci. Technol., A,2012

4. Electronic and chemical properties of the c-Si/Al2O3 interface;Werner;J. Appl. Phys.,2011

5. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3;Hoex;J. Appl. Phys.,2008

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