Structural Properties of Al–O Monolayers in SiO2 on Silicon and the Maximization of Their Negative Fixed Charge Density-Reference-Cited by-同舟云学术

Structural Properties of Al–O Monolayers in SiO2 on Silicon and the Maximization of Their Negative Fixed Charge Density

Published:2018-08-15 Issue:36 Volume:10 Page:30495-30505
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hiller Daniel¹^ORCID,Göttlicher Jörg²,Steininger Ralph²,Huthwelker Thomas³,Julin Jaakko⁴,Munnik Frans⁴,Wahl Michael⁵,Bock Wolfgang⁵,Schoenaers Ben⁶,Stesmans Andre⁶,König Dirk⁷^ORCID

Affiliation:

1. Research School of Engineering, Australian National University (ANU), Canberra, ACT 2601, Australia

2. Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), 76344 76344 Eggenstein-Leopoldshafen, Germany

3. Swiss Light Source (SLS), Paul Scherrer Institute (PSI), 5232 Villigen, Switzerland

4. Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, Germany

5. Institute for Surface and Thin Film Analysis GmbH (IFOS), 67663 Kaiserslautern, Germany

6. Department of Physics, University of Leuven, 3001 Leuven, Belgium

7. Integrated Materials Design Centre (IMDC), University of New South Wales (UNSW), Sydney, NSW 2052, Australia

Funder

Deutscher Akademischer Austauschdienst

Deutsche Forschungsgemeinschaft

Horizon 2020 Framework Programme

Alexander von Humboldt-Stiftung

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b06098

Reference63 articles.

1. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

2. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

3. Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide

4. High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

5. Excellent silicon surface passivation with 5 Å thin ALD Al2 O3 layers: Influence of different thermal post-deposition treatments

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