Chemical and structural study of electrically passivating Al2O3/Si interfaces prepared by atomic layer deposition-Reference-Cited by-同舟云学术

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Chemical and structural study of electrically passivating Al2O3/Si interfaces prepared by atomic layer deposition

Published:2012-07 Issue:4 Volume:30 Page:04D106
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Naumann Volker,Otto Martin,Wehrspohn Ralf B.,Hagendorf Christian

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4704601

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4. In situ x-ray photoelectron spectroscopy analysis of the atomic layer deposition of Al₂O₃ on SiO _x /Si: Interface dipole and persistent surface groups;Nanotechnology;2023-03-30

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