Electric Fields and Surface Fermi Level in Undoped GaN/AlN Two‐Dimensional Hole Gas Heterostructures-Reference-Cited by-同舟云学术

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Electric Fields and Surface Fermi Level in Undoped GaN/AlN Two‐Dimensional Hole Gas Heterostructures

Published:2021-02-18 Issue:4 Volume:15 Page:2000573
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Janicki Łukasz¹^ORCID,Chaudhuri Reet²^ORCID,Bader Samuel James³^ORCID,Xing Huili Grace²⁴⁵^ORCID,Jena Debdeep²⁴⁵^ORCID,Kudrawiec Robert¹^ORCID

Affiliation:

1. Department of Semiconductor Materials Engineering Wrocław University of Science and Technology Wybrzeże Wyspiańskiego 27 Wrocław 50-370 Poland

2. Electrical and Computer Engineering Cornell University Ithaca NY 14853 USA

3. Applied and Engineering Physics Cornell University Ithaca NY 14853 USA

4. Material Science and Engineering Cornell University Ithaca NY 14853 USA

5. Kavli Institute of Nanoscale Science Cornell University Ithaca NY 14853 USA

Funder

Narodowe Centrum Nauki

Air Force Office of Scientific Research

National Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000573

Reference29 articles.

1. GaN/AlGaN p-channel inverted heterostructure JFET

2. T.Zimmermann M.Neuburger M.Kunze I.Daumiller A.Denisenko A.Dadgar A.Krost E.Kohn in61st Device Research Conf. Conf. Digest(Cat. No.03TH8663) IEEE Salt Lake City UT USA2003 pp.19–20 https://doi.org/10.1109/DRC.2003.1226852.

3. p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

4. Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

5. A.Nakajima S.Nishizawa H.Ohashi H.Yonezawa K.Tsutsui K.Kakushima H.Wakabayashi H.Iwai in2014 IEEE 26th Int. Symp. Power Semiconductor Devices IC's (ISPSD) IEEE Piscataway NJ USA2014 pp.241–244 https://doi.org/10.1109/ISPSD.2014.6856021.

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1. Perovskite/GaN-Based Light-Modulated Bipolar Junction Transistor for High Comprehensive Performance Visible-Blind Ultraviolet Photodetection;ACS Photonics;2024-06-24

2. Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy;Physical Review B;2024-03-01

3. Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures;Applied Physics Letters;2023-04-24

4. Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates;IEEE Journal of the Electron Devices Society;2023

5. MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases;Journal of Physics D: Applied Physics;2022-08-30

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