Perovskite/GaN-Based Light-Modulated Bipolar Junction Transistor for High Comprehensive Performance Visible-Blind Ultraviolet Photodetection-Reference-Cited by-同舟云学术

Perovskite/GaN-Based Light-Modulated Bipolar Junction Transistor for High Comprehensive Performance Visible-Blind Ultraviolet Photodetection

Published:2024-06-24 Issue:8 Volume:11 Page:3026-3036
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Jiang Sijie¹,Wei Wenjie¹,Li Shaoqun¹,Tian Yuanyuan¹,Yun Yikai¹,Chen Mengyu¹²^ORCID,Huang Kai²³⁴,Li Cheng¹²^ORCID,Zhang Rong²³⁴

Affiliation:

1. School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China

2. Future Display Institute of Xiamen, Xiamen 361005, P. R. China

3. Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, P. R. China

4. Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Xiamen University, Xiamen 361005, P. R. China

Funder

National Key Research and Development Program of China

Natural Science Foundation of Fujian Province

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.4c00250

Reference53 articles.

1. A Real-Time Wearable UV-Radiation Monitor based on a High-Performance p-CuZnS/n-TiO2 Photodetector

2. Catalyst‐Free Vapor–Solid Deposition Growth of β‐Ga 2 O 3 Nanowires for DUV Photodetector and Image Sensor Application

3. Non‐Ultrawide Bandgap Semiconductor GaSe Nanobelts for Sensitive Deep Ultraviolet Light Photodetector Application

4. Ga2O3/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

5. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

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