No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO <sub>2</sub> Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method-Reference-Cited by-同舟云学术

No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO ₂ Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method

Published:2022-01-14 Issue: Volume: Page:2100574
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Shimura Reijiro¹,Mimura Takanori¹,Tateyama Akinori¹,Shiraishi Takahisa¹,Shimizu Takao¹²,Yamada Tomoaki³,Tanaka Yoshitomo⁴,Inoue Yukari⁴,Funakubo Hiroshi¹⁵^ORCID

Affiliation:

1. School of Materials and Chemical Technology Tokyo Institute of Technology 4259, Nagatsuta-cho Midori-ku Yokohama 226-8502 Japan

2. Research Center for Functional Materials National Institute for Materials Science (NIMS) 1-1, Namiki Tsukuba 305-0044 Japan

3. Department of Energy Engineering Nagoya University Furo-cho Chikusa-ku Nagoya 464-8603 Japan

4. Technical Center TDK Corporation 2-15-7 Hiagshi-Ohwada Ichikawa-shi Chiba 272-8558 Japan

5. Materials Research Center for Element Strategy (Tokyo Tech MCES) Tokyo Institute of Technology 4259 Nagatsuta-cho Midori-ku Yokohama 226-8502 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100574

Reference30 articles.

1. Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator

2. Normally-off HfO2-gated diamond field effect transistors

3. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

4. Effects of recess depths on performance of AlGaN/GaN power MIS-HEMTs on the Si substrates and threshold voltage model of different recess depths for the using HfO2 gate insulator

5. Ferroelectricity in hafnium oxide thin films

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1. No‐Heating Deposition of Ferroelectric x%YO_1.5–(100−x%)(Hf_1−yZr_y)O₂ Films;physica status solidi (a);2023-06-25

2. Ferroelectrics at the nanoscale: materials and devices – a critical review;Critical Reviews in Solid State and Materials Sciences;2022-06-09