Affiliation:
1. School of Materials and Chemical Technology Tokyo Institute of Technology 4259 Nagatsuta-cho, Midori-ku Yokohama Kanagawa 226-8503 Japan
2. Department of Chemistry Faculty of Science Gakushuin University 1-5-1, Mejiro Toshima-ku 171-8588 Japan
3. Magnesium Research Center Kumamoto University 2-39-1 Kurokami Chuo-ku Kumamoto 860-8555 Japan
4. Materials Research Center for Element Strategy (Tokyo Tech MCES) Tokyo Institute of Technology 4259 Nagatsuta-cho, Midori-ku Yokohama Kanagawa 226-8503 Japan
Abstract
The no‐heating deposition of x%YO1.5–(100−x%)(Hf1−yZry)O2 (x = 0−0.09, y = 0, 0.25, 0.50, and 1) is achieved using a radio‐frequency magnetron sputtering method. To investigate the crystal structure and ferroelectric properties, epitaxial films are grown on (111)‐oriented indium tin oxide (ITO)/(111) Y‐stabilized zirconia (YSZ) substrates. The ferroelectric orthorhombic phase is obtained for the 5–7%YO1.5–95–93%HfO2 and 5%YO1.5–95% (Hf0.75Zr0.25)O2 films. The field‐induced phase transition from tetragonal to orthorhombic is confirmed for the 8%YO1.5–92%HfO2 and 5%YO1.5–95%(Hf0.50Zr0.50)O2 films. The remnant polarization (Pr) and coercive field (Ec) are 12–19 μC cm−2 and 2,000–2,500 kV cm−1, respectively. The piezoelectric response of 1 μm thick films is investigated for 6%YO1.5–94% HfO2, 7%YO1.5–93%HfO2, and 5%YO1.5–95%(Hf0.50Zr0.50)O2 films, which have piezoelectric coefficients (d33) of 1.0, 3.3, and 5.0 pm V−1, respectively. These results show no‐heating deposition of x%YO1.5–(100−x%)(Hf1−yZry)O2 films with ferroelectric and piezoelectric properties.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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