Excellent Passivation of n ‐Type Silicon Surfaces Enabled by Pulsed‐Flow Plasma‐Enhanced Chemical Vapor Deposition of Phosphorus Oxide Capped by Aluminum Oxide-Reference-Cited by-同舟云学术

Excellent Passivation of n ‐Type Silicon Surfaces Enabled by Pulsed‐Flow Plasma‐Enhanced Chemical Vapor Deposition of Phosphorus Oxide Capped by Aluminum Oxide

Published:2020-11-06 Issue:1 Volume:15 Page:2000399
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Melskens Jimmy¹^ORCID,Theeuwes Roel J.¹,Black Lachlan E.²,Berghuis Willem-Jan H.¹,Macco Bart¹,Bronsveld Paula C. P.³,Kessels W. M. M.¹

Affiliation:

1. Department of Applied Physics Eindhoven University of Technology P.O. Box 513 Eindhoven MB 5600 The Netherlands

2. Research School of Electrical, Energy and Materials Engineering The Australian National University Canberra ACT 2600 Australia

3. TNO Energy Transition Solar Energy Westerduinweg 3 Petten ZG 1755 The Netherlands

Funder

Australian Renewable Energy Agency

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000399

Reference40 articles.

1. Charge Carrier Separation in Solar Cells

2. Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

3. Carrier population control and surface passivation in solar cells

4. Explorative studies of novel silicon surface passivation materials: Considerations and lessons learned

5. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

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