Effective Hydrogenation of Poly-Si Passivating Contacts by Atomic-Layer-Deposited Nickel Oxide
Author:
Affiliation:
1. Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
2. IEK5-Photovoltaik, Forschungszentrum Jülich, Jülich, Germany
3. TNO, Petten, The Netherlands
4. Tempress Systems BV, Vaassen, The Netherlands
Funder
Top Consortia for Knowledge and Innovation Solar Energy Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/5503869/9967377/09905475.pdf?arnumber=9905475
Reference62 articles.
1. Plasma-enhanced and thermal atomic layer deposition of Al2O3using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
2. Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
3. Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
4. Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells
5. Concurrent cationic and anionic perovskite defect passivation enables 27.4% perovskite/silicon tandems with suppression of halide segregation
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1. Electrochemical Activation of Atomic-Layer-Deposited Nickel Oxide for Water Oxidation;The Journal of Physical Chemistry C;2023-11-08
2. Improving doped polycrystalline silicon passivating contacts with magnesium fluoride;Solar Energy Materials and Solar Cells;2023-06
3. Crystalline silicon solar cells with thin poly‐SiOx carrier‐selective passivating contacts for perovskite/c‐Si tandem applications;Progress in Photovoltaics: Research and Applications;2023-03-25
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