Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cells-Reference-Cited by-同舟云学术

Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cells

Published:2022-09 Issue: Volume:245 Page:111869
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Macco Bart^ORCID,van de Poll Mike L.,van de Loo Bas W.H.,Broekema Tim M.P.,Basuvalingam Saravana B.,van Helvoirt Cristian A.A.,Berghuis Wilhelmus J.H.,Theeuwes Roel J.,Phung Nga,Kessels Wilhelmus M.M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference32 articles.

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3. Passivating contacts for crystalline silicon solar cells;Allen;Nat. Energy,2019

4. Progress and future prospects of wide‐bandgap metal‐compound‐based passivating contacts for silicon solar cells;Gao;Adv. Mater.,2022

5. Passivating contacts and tandem concepts: approaches for the highest silicon-based solar cell efficiencies;Hermle;Appl. Phys. Rev.,2020

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