Image Quality Assessment of a CMOS/Gd2O2S:Pr,Ce,F X-Ray Sensor

Author:

Michail Christos1ORCID

Affiliation:

1. Radiation Physics, Materials Technology and Biomedical Imaging Laboratory, Department of Biomedical Engineering, Technological Educational Institute of Athens, Egaleo, 122 10 Athens, Greece

Abstract

The aim of the present study was to examine the image quality performance of a CMOS digital imaging optical sensor coupled to custom made gadolinium oxysulfide powder scintillators, doped with praseodymium, cerium, and fluorine (Gd2O2S:Pr,Ce,F). The screens, with coating thicknesses 35.7 and 71.2 mg/cm2, were prepared in our laboratory from Gd2O2S:Pr,Ce,F powder (Phosphor Technology, Ltd.) by sedimentation on silica substrates and were placed in direct contact with the optical sensor. Image quality was determined through single index (information capacity, IC) and spatial frequency dependent parameters, by assessing the Modulation Transfer Function (MTF) and the Normalized Noise Power Spectrum (NNPS). The MTF was measured using the slanted-edge method. The CMOS sensor/Gd2O2S:Pr,Ce,F screens combinations were irradiated under the RQA-5 (IEC 62220-1) beam quality. The detector response function was linear for the exposure range under investigation. Under the general radiography conditions, both Gd2O2S:Pr,Ce,F screen/CMOS combinations exhibited moderate imaging properties, in terms of IC, with previously published scintillators, such as CsI:Tl, Gd2O2S:Tb, and Gd2O2S:Eu.

Funder

European Social Fund

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Instrumentation,Control and Systems Engineering

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